| 摘要 |
<p>A polycrystalline silicone thin film transistor and a manufacturing method thereof are provided to reduce a process time and a process cost by crystallizing an amorphous silicone layer of a source/drain region and an active region with an MIC(Metal Induced Crystallization) and an MILC(Metal Induced Lateral Crystallization). A gate insulation film(13) is formed on a gate electrode. An amorphous silicone layer and an N type silicone layer are successively formed on the gate insulation film. An N type silicone layer and an active region(14a) for a source region(15b) and a drain region(15c) are defined by patterning the N type silicone layer and the amorphous silicone layer. A first crystallization induced metal film and a second crystallization induced metal film are formed on a forming position of the source region and the drain region. The active region having the source region, the drain region, and a channel region is formed. The source region, the drain region, and the active region positioned in a bottom of the first crystallization induced metal film and the second crystallization induced metal film are crystallized by an MIC by heating a substrate, and the channel region is crystallized by an MILC.</p> |
