SINGLE-CRYSTAL SIC AND PROCESS FOR PRODUCING THE SAME

摘要

An improved method for epitaxial growth of single-crystal SiC stably over a prolonged period of time; and a single-crystal SiC of high quality obtained as a consequence thereof. There is provided a process for producing a single-crystal SiC, including the steps of disposing in a crucible a susceptor with SiC seed crystal fixed thereto and a raw material supply pipe for supplying of carbon (C) particles and SiO2 particles as raw materials for production of single-crystal SiC; and feeding the raw materials for production of single-crystal SiC together with inert carrier gas through the raw material supply pipe onto the SiC seed crystal in the crucible with high-temperature atmosphere to thereby attain growth of single-crystal SiC, characterized in that the supply molar ratio of SiO2 to C of the raw material is such that SiO2:C = 1.05:3.0 to 2.0:3.0. Further, there is provided a single-crystal SiC produced by the process.