| 摘要 |
Provided is a semiconductor device having excellent device characteristics and reliability, with the values of Vth of an nMOS transistor and a pMOS transistor at values required as a low power device. The semiconductor device is provided with a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a completely depleted MOS transistor having a first gate electrode including at least one kind of crystal phase selected from among a group composed of a WSi2 crystal phase, an MoSi2 crystal phase, an NiSi crystal phase and an NiSi2 crystal phase, as a silicide region (1). The nMOS transistor is a completely depleted MOS transistor including at least one kind of crystal phase selected from among a group composed of a PtSi crystal phase, a Pt2Si crystal phase an IrSi crystal phase, an Ni2Si crystal phase and an Ni3Si crystal phase, as a silicide region (2). |
