发明名称 |
High quality silicon oxide films by remote plasma cvd from disilane precursors |
摘要 |
A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
|
申请公布号 |
EP2053143(A2) |
申请公布日期 |
2009.04.29 |
申请号 |
EP20080167338 |
申请日期 |
2008.10.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MALLICK, ABHIJIT BASU;NEMANI, SRINIVAS D.;YIEH, ELLIE |
分类号 |
C23C16/34;C23C16/452;C23C16/56 |
主分类号 |
C23C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|