| 摘要 |
A capacitor of a semiconductor device and a forming method thereof are provided to prevent a contact between bottom electrodes by forming a protective film after forming a storage hole. A storage node contact plug(101) is formed, and is connected to a semiconductor substrate(100). A first sacrificial insulation film(105) is formed on a structure of the result. A top part of the storage node contact plug is exposed by forming a first storage hole on the first sacrificial insulation film. A protective film is formed on a side wall and a bottom surface of the first storage hole. A second sacrificial insulation film(109) is formed on a structure of the result. A top part of the storage node contact plug is exposed by forming a second storage hole(111) on the second sacrificial insulation film. A bottom electrode is formed on a side wall and a bottom surface of the second storage hole.
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