发明名称 |
Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device |
摘要 |
A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
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申请公布号 |
US7524741(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20060393808 |
申请日期 |
2006.03.31 |
申请人 |
TOYODA GOSEI CO., LTD.;KOHA CO., LTD. |
发明人 |
USHIDA YASUHISA;SHINODA DAISUKE;YAMAZAKI DAISUKE;HIRATA KOJI;IKEMOTO YUHEI;SHIBATA NAOKI;AOKI KAZUO;GARCIA VILLORA ENCARNACION ANTONIA;SHIMAMURA KIYOSHI |
分类号 |
H01L21/36;H01L21/20;H01L33/06;H01L33/12;H01L33/32;H01L33/42;H01L33/54;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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