发明名称 Radiation detector with an epitaxially grown semiconductor body
摘要 A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.
申请公布号 US7525083(B2) 申请公布日期 2009.04.28
申请号 US20050240987 申请日期 2005.09.29
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 JAEGER ARNDT;STAUBETA PETER
分类号 H01J40/14;H01L27/00 主分类号 H01J40/14
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