发明名称 Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate
摘要 A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.
申请公布号 US7524708(B2) 申请公布日期 2009.04.28
申请号 US20060359798 申请日期 2006.02.22
申请人 NEOSEMITECH CORPORATION 发明人 SONG JOON-SUK;SEO SOO-HYUNG;OH MYUNG-HWAN
分类号 H01L21/00;H01L21/84;H01L29/04;H01L33/16;H01L33/22 主分类号 H01L21/00
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