发明名称 Semiconductor device and a method of manufacturing the same
摘要 A semiconductor device has a semiconductor (e.g., a silicon substrate), an electrically conductive region (e.g., a source region and a drain region) which is in contact with the semiconductor to form a Schottky junction, and an insulator. The insulator is in contact with the semiconductor and the electrically conductive region, and has a fixed-charge containing region which contains a fixed charge and extends across a boundary between the semiconductor and the electrically conductive region.
申请公布号 US7525171(B2) 申请公布日期 2009.04.28
申请号 US20060451422 申请日期 2006.06.13
申请人 SHARP KABUSHIKI KAISHA 发明人 KIMOTO KENJI
分类号 H01L27/095 主分类号 H01L27/095
代理机构 代理人
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