发明名称 Magnetoresistive effect element and magnetic memory
摘要 A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
申请公布号 US7525837(B2) 申请公布日期 2009.04.28
申请号 US20080019657 申请日期 2008.01.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KAI TADASHI;NAKAYAMA MASAHIKO;IKEGAWA SUMIO;FUKUZUMI YOSHIAKI;IWATA YOSHIHISA
分类号 G11C11/00 主分类号 G11C11/00
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