METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve an etching speed and an etching selection ratio by supplying the etching gas for etching a photoresist pattern by giving a pulse with a predetermined period. An interlayer dielectric layer is formed on a semiconductor substrate. A mask pattern is formed on the interlayer dielectric layer. The interlayer dielectric layer is etched and patterned by using a mask pattern as an etching mask. In a patterning process, the amount of the etching gas supply for etching the interlayer dielectric layer is changed periodically. The etching gas includes the main etching gas and the auxiliary etching gas of the fluorocarbon group gas.