发明名称 |
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
摘要 |
A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer.
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申请公布号 |
US7525122(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20050169378 |
申请日期 |
2005.06.29 |
申请人 |
CREE, INC. |
发明人 |
RING ZOLTAN;HAGLEITNER HELMUT;HENNING JASON PATRICK;MACKENZIE ANDREW;ALLEN SCOTT;SHEPPARD SCOTT THOMAS;SMITH RICHARD PETER;SRIRAM SAPTHARISHI;WARD, III ALLAN |
分类号 |
H01L29/15;H01L31/0256 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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