发明名称 |
High voltage double diffused drain MOS transistor with medium operation voltage |
摘要 |
A method of fabricating a high voltage MOS transistor with a medium operation voltage on a semiconductor wafer. The transistor has a double diffused drain (DDD) and a medium operation voltage such as 6 to 10 volts, which is advantageous for applications having both low and higher operation transistor devices. The second diffusion region of the DDD is self-aligned to the spacer on the sidewalls of the gate and gate dielectric, so that the transistor size may be decreased.
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申请公布号 |
US7525150(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20040819527 |
申请日期 |
2004.04.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN FU-HSIN;LIN YI-CHUN;LIU RUEY-HSIN |
分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L21/8222;H01L21/8234;H01L29/06;H01L29/08 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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