发明名称 |
Semiconductor substrate, manufacturing method therefor, and semiconductor device |
摘要 |
A semiconductor substrate and a manufacturing method therefore, and a semiconductor device using the semiconductor substrate comprise a strained Si region and unstrained Si region formed at substantially the same level. In an aspect of the invention, a semiconductor substrate is provided by comprising a support substrate, a first semiconductor region including a first silicon layer formed above the support substrate, a second semiconductor region including a strained second silicon layer formed above the support substrate, a surface of the second silicon layer being formed at substantially the same level as a surface of the first silicon layer, and an insulating film at an interface between the first semiconductor region and the second semiconductor region.
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申请公布号 |
US7525154(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20040852511 |
申请日期 |
2004.05.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGANO HAJIME;MIZUSHIMA ICHIRO;MIYANO KIYOTAKA |
分类号 |
H01L27/08;H01L29/72;H01L21/02;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/84;H01L27/04;H01L27/088;H01L27/092;H01L27/10;H01L27/108;H01L27/12;H01L29/739;H01L29/78;H01L29/786 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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