发明名称 |
Controllable varactor within dummy substrate pattern |
摘要 |
A dummy region varactor for improving a CMP process and improving electrical isolation from active areas and a method for forming the same, the varactor including a semiconductor substrate having a dummy region said dummy region including a first well region having a first polarity; shallow trench isolation (STI) structures disposed in the dummy region defining adjacent mesa regions comprising first, second, and third mesa regions; a second well region having a second polarity underlying the first mesa region having the second polarity to form a PN junction interface; wherein said second and third mesa regions having the first polarity are formed adjacent either side of said first mesa region.
|
申请公布号 |
US7525177(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20050097743 |
申请日期 |
2005.04.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG CHUNG-LONG;THEI KONG-BENG;LIN SHENG-YUAN |
分类号 |
H01L29/93 |
主分类号 |
H01L29/93 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|