发明名称 |
Metallization method of semiconductor device |
摘要 |
A method for forming a metallization contact in a semiconductor device includes (a) forming an insulating layer on a semiconductor substrate including an active device region or a lower metal wire; (b) forming a contact hole to expose a portion of the active device region or lower metal wire by etching a portion of the insulating layer; (c) depositing a first TiN layer on the insulating layer and inside the contact hole by a PVD process using a first carrier gas composition of nitrogen (N2) and argon (Ar); (d) depositing a second TiN layer on the first TiN layer by a PVD process using a second carrier gas composition of nitrogen (N2) and argon (Ar); and (e) forming a metal layer on the second TiN layer.
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申请公布号 |
US7524749(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20050318589 |
申请日期 |
2005.12.28 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG JOO |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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