| 摘要 |
A multiple-port SRAM cell includes a latch having a first node and a second node for retaining a value and its complement, respectively. The cell has a write port separate from a read port for parallel operation. A number of transistors are used to connect the first and second nodes to a number of bit lines, such as a read port bit line, a read port complementary bit line, a read/write port bit line, and a read/write port complementary bit line. In a layout view of the multiple-port SRAM cell, the read port bit line, read port complementary bit line, read/write port bit line and read/write port complementary bit line are separated by at least one supply voltage line, one or more complementary supply voltage lines, and one or more word line landing pads. |
