Method for monitoring temperature in thermal process

摘要

A method for monitoring a temperature in a thermal process is described. A monitor substrate is provided and subject to ion implantation, and a characteristic parameter of the monitor substrate correlated to the disorder degree of the lattice structure of the same is measured to obtain a first value. The monitor substrate is then subject to the thermal process, and the characteristic parameter of the monitor substrate is measured again to obtain a second value. The difference between the first value and the second value is calculated to derive the temperature in the thermal process.