发明名称 Semiconductor device and methods of manufacturing the same
摘要 A semiconductor device includes at least two transistors and a charge-trapping structure. The charge-trapping structure traps charges, which are moved from a selected transistor toward a non-selected transistor, adjacent to the selected transistor among the transistors, thereby preventing a threshold voltage of the non-selected transistor from being increased. Thus, the charge-trapping structure traps the charges so that an increase of the threshold voltage of the non-selected voltage is suppressed.
申请公布号 US7525847(B2) 申请公布日期 2009.04.28
申请号 US20050282806 申请日期 2005.11.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SOO-CHEOL;LEE KI-JIK
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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