发明名称 Photomask and manufacturing method thereof, fabrication process of an electron device
摘要 A photomask made by using a negative photoresist includes a transparent substrate defined with a device chip area, an opaque device pattern formed on the transparent substrate in the device chip area, and a dummy opaque pattern provided on the transparent substrate outside of the device chip area.
申请公布号 US7524591(B2) 申请公布日期 2009.04.28
申请号 US20050126295 申请日期 2005.05.11
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 HOSONO KOJI
分类号 G03C5/00;G03F1/70;G03F1/80;H01L21/027 主分类号 G03C5/00
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