| 摘要 |
A memory device includes a memory cell having a capacitor for accumulating electric charges in accordance with the logic of data, a bit line connected to the memory cell, a charge transfer circuit for transferring the electric charges in the bit line to an output node, a dummy memory cell connected to the bit line, and a control circuit for controlling the charge transfer ability of the charge transfer circuit in accordance with the change in the voltage of the bit line.
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