发明名称 |
Pillar P-i-n semiconductor diodes |
摘要 |
An arrangement of pillar shaped p-i-n diodes having a high aspect ration are formed on a semiconductor substrate. Each device is formed by an intrinsic or lightly doped region (i-region) positioned between a P+ region and an N+ region at each end of the pillar. The arrangement of pillar p-i-n diodes is embedded in an optical transparent medium. For a given surface area, more light energy is absorbed by the pillar arrangement of p-i-n diodes than by conventional planar p-i-n diodes. The pillar p-i-n diodes are preferably configured in an array formation to enable photons reflected from one pillar p-i-n diode to be captured and absorbed by another p-i-n diode adjacent to the first one, thereby optimizing the efficiency of energy conversion.
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申请公布号 |
US7525170(B2) |
申请公布日期 |
2009.04.28 |
申请号 |
US20060538557 |
申请日期 |
2006.10.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS LU-CHEN;MANDELMAN JACK A.;CHENG KANGGUO |
分类号 |
H01L31/058 |
主分类号 |
H01L31/058 |
代理机构 |
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代理人 |
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地址 |
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