| 摘要 |
<p>A thin film transistor and a manufacturing method thereof which forms a plurality of grooves on a gate electrode and a gate insulating layer or an active layer are provided to increase the channel width and minimize a process procedure and cost. A gate electrode(113) is formed on a substrate(100). An active layer(117b) prepares for the channel in order to be insulated with the gate electrode. The active layer has a concave part and a convex part at the domain corresponding to a channel. An ohmic contact layer is formed on the active layer. The ohmic contact exposes channel. The source electrode is formed on the ohmic contact. A drain electrode faces the source electrode. The concave part and the convex part are formed according to the width direction of channel. The gate electrode with the channel of the active layer is formed in the concave or convex shape.</p> |
