NONVOLATILE MEMORY DEVICE, METHOD OF FABRICATING THE SAME AND SYSTEM INCORPORATING THE SAME

摘要

A nonvolatile memory device, a manufacturing method thereof, and a system are provided to facilitate an erase operation by a tunneling through an upper insulating layer by using the upper insulating layer with lower dielectric constant than the dielectric constant of the lower insulating layer. A semiconductor substrate(100) includes a first source/drain region(101), a second source/drain region(102) and a channel region(103) between the source/drain regions. A gate stack(600) is formed on the semiconductor substrate. The gate stack includes a lower insulating layer(200), a charge trap layer(300), an upper insulating layer(400) and a control gate electrode(500). The first and second source/drain regions are formed in the active region of the semiconductor substrate.