发明名称 Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof
摘要 The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer.
申请公布号 US7524711(B2) 申请公布日期 2009.04.28
申请号 US20050163476 申请日期 2005.10.20
申请人 HANNSTAR DISPLAY CORP. 发明人 LAN CHIH-CHIEH
分类号 H01L21/00;H01L21/84 主分类号 H01L21/00
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