| 摘要 |
A semi-conductor device comprises a body of initially high purity silicon impregnoted with from 1013 to 1017 atoms of gold per cc. bearing a pair of ohmic electrodes. The device has enhanced photo-conductive and temperature variable resistance properties particularly at low temperatures. A suitable mono-crystalline rod may be produced by seed withdrawal from a silicon melt containing 5 to 10 per cent of gold, which has a low segregation coefficient. Specifications 686,907 and 721,671 are referred to.
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