Thin film transistor array and display apparatus

摘要

A thin film transistor array (100) is disclosed. The thin film transistor array (100) includes plural gate electrodes (120) formed on an insulation substrate (110), plural source electrodes (150) formed above or under the gate electrodes (120) via a gate insulation film (140) so that the source electrodes (150) cross the gate electrodes (120) in a planar view, plural drain electrodes (160) formed at corresponding positions surrounded by the gate electrodes (120) and the source electrodes (150) in a planar view in the same layer as that of the source electrodes (150), semiconductor layers (170) formed via the gate insulation film (140) to face the gate electrodes (120) for forming corresponding channel regions (170a) between the source electrodes (150) and the drain electrodes (160). The plural gate electrodes (120) are linearly formed, and the channel regions (170a) are disposed to face the gate electrodes (120).