SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device, in which the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and in which a contact resistance of 10-11 7cm2 or less is realized by setting a work function difference of 0.2 eV or less between an electrode and the silicon. The semiconductor device thus provided can operate on a frequency of 10 GHz or higher.