| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to reduce a passing gate effect and a neighboring gate effect by applying a device isolation structure including a grounded conductive layer. A semiconductor device includes a device isolation structure(224), a gate structure(250), and a landing plug(270). The device isolation structure is formed on a semiconductor substrate in order to define an active region(210a). The gate structure is formed as a recess gate. The gate structure is formed on the active region and a top of a device isolation structure adjacent to the active region. The landing plug is formed by filling a region between the gate structures of a top of the active region with conductive material. The device isolation structure includes a first conductive layer(220). A neighboring gate effect or a passing gate effect is minimized by grounding the first conductive layer. An interlayer insulation film are formed between the gate structures positioned on a top of the device isolation structure as a second conductive layer(254). The second conductive layer is connected to the first conductive layer of the device isolation structure.
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