| 摘要 |
A manufacturing method of a CMOS image sensor is provided to improve a photosensitivity of an image sensor by forming an interlayer insulation film made of material having a high light guide property. An interlayer insulation film(20) including a plurality of metal wirings(21,22,23) is formed on a top of a semiconductor substrate(10) including a device isolation film(11) and a photo diode(12). A photoresist pattern is formed on the interlayer insulation film. A trench is formed by etching the interlayer insulation film. A passivation layer(30) is formed on a front surface of the interlayer insulation film including the trench. The passivation layer is hardened by annealing the passivation layer. An additional insulation film(40) is filled with the front surface of the passivation layer including the trench. A surface of the additional insulation film is flattened by performing a spin coating process about the surface of the additional insulation film. A color filter layer(50) is formed on the additional insulation film. A color filter is formed through a color filter formation process. A flattened layer(60) and a resist pattern(70) for a micro lens are formed on the color filter.
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