| 摘要 |
A surface micromachining process for the fabrication of three-dimensional micro-hinges directly on silicon on insulator wafers (50). The process includes the steps of (a) defining openings (54) around the surface of a desired hinge pin in a single layer (51) of a silicon single crystal; (b) subjecting the openings (54) to an etching process for removal of oxide material (52) that is located in contiguous relation to the openings (54) under the area of a hinge; (c) growing thermal oxide (56) to define a gap around the hinge pin; (d) immediately depositing a thin layer of a chemical vapor deposited oxide (55) sufficient to cover fine gaps not completely covered by the thermal oxide (56); depositing polysilicon and etching to define a hinge cap (54); and further etching to allow a mirror (58) to be lifted out of the plane of the silicon wafer (Fig. 16). <IMAGE> |
