| 摘要 |
A method for forming a wiring of a semiconductor device is provided to prevent a metal layer from being attached by the fluorine of a lower layer by etching the lower layer after forming a metal etching preventing layer. An insulating layer(60), a lower layer, a metal layer and an upper layer are successively formed on a semiconductor substrate. A photosensitive pattern is formed on the substrate. The photosensitive pattern exposes the part of the upper layer corresponding to the horizontal separation space between the wirings. The upper layer and the metal layer are etched by using the photosensitive pattern as the mask and the part of the lower layer is exposed. A metal etching prevention film(70) is formed on the substrate. The part of the insulating layer is exposed by etching the lower layer by using the photosensitive pattern as the mask.
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