| 摘要 |
A memory element and a display device are provided to be embedded in a pixel. A memory element comprises a thin film transistor and a capacitor. The memory element is formed on a substrate(SUB). The thin film transistor has a semiconductor thin film(PSI) and the first and second gate electrodes(F-GATE,S-GATE). The first and second gate electrodes insert the semiconductor thin film through an insulating layer(1GOX,2GOX) upward or downward. A capacitor connects to the first gate electrode. Data are stored in the capacitor connected to the first gate electrode. The second gate electrode is controlled so that the data stored in the capacitor are read.
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