Method of surface treating III-V semiconductor compound based substrates and method of manufacturing III-V compound semiconductors

摘要

Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which the substrate made of a Group III-V semiconductor compound is rendered stoichiometric and microscopic roughness on the surface following epitaxial growth is reduced. The methods include preparing a substrate made of a Group III-V semiconductor compound (S10), and cleaning the substrate with a cleaning solution whose pH has been adjusted to an acidity of 2 to 6.3 inclusive and to which an oxidizing agent has been added (S20).