METHOD FOR MANUFACTURING NONVOLATILE MAGNETORESISTIVE MEMORY DEVICE USING NANOIMPRINTING LITHOGRAPHY

摘要

A manufacturing method of a nonvolatile magnetoresistive memory device using a nano imprinting lithography is provided to reduce a production cost by using a nano imprinting lithography technique. A first interlayer insulation film(110) is formed on a front of a substrate. A source line(111) is formed on a top of the first interlayer insulation film. A second interlayer insulation film(112) is formed on a front of the substrate. A digit line(113) is formed on a top of the second interlayer insulation film. A third interlayer insulation film(114) is formed on a front of a film including the digit line. A bottom electrode(115) is contacted with a third plug(108C), and is formed on a top of the third interlayer insulation film. A pinning layer(116) and a fixed layer(117) are formed on a top of the bottom electrode. A magnetic tunnel junction cell(121) is formed on a top of the bottom electrode. A bit line(123) is contacted with a top surface of the magnetic tunnel junction cell.