发明名称 |
Group III nitride semiconductor device |
摘要 |
A group III nitride semiconductor device is disclosed which has a reduced number of threading dislocations adversely affecting characteristics of the group III nitride semiconductor device. A method for manufacturing the group III nitride semiconductor device controls pit formation in a GaN layer formed on a sapphire substrate. First, a low temperature buffer layer is formed on a sapphire substrate_by MOCVD. An undoped GaN layer having a predetermined thickness is then grown on the low temperature buffer layer. Next, a GaN layer containing magnesium as a dopant is formed on the layer at a lower pressure than that of depositing the GaN layer, which results in filling pits generated on the GaN layer to flatten the surface of another GaN layer.
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申请公布号 |
EP2051308(A2) |
申请公布日期 |
2009.04.22 |
申请号 |
EP20090002185 |
申请日期 |
2000.06.07 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
WATANABE, ATSUSHI;TANAKA, TOSHIYUKI;OTA, HIROYUKI |
分类号 |
H01L33/12;H01L21/205;H01L29/20;H01L33/32;H01S5/00;H01S5/323 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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