TRANSISTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A transistor device and a manufacturing method thereof are provided to separate a substrate, a channel, a source, and a drain by forming an intermediate layer. A buffer layer(21a), an intermediate layer(22), and a semiconductor layer are successively formed on a top of a substrate(21). A mask layer is formed on a top of the semiconductor layer. A trench is formed till the buffer layer or the substrate. A substrate having the trench is oxidized through a dry oxidation or a wet oxidation. The trench is filled with insulation material. A device isolation film(23) is formed by filling the trench with an oxide film. The mask is removed by performing a chemical mechanical polishing process. The intermediate layer and the device isolation film are densified by performing an annealing process. A channel(25) is formed by performing a channel ion injection process. A gate insulation film(26) and a gate electrode layer(27) are formed on a top of the channel. A source(24a) and a drain(24b) are formed by performing a patterning process.