发明名称 INTERNAL VOLTAGE GENERATOR OF SEMICONDUCTOR MEMORY DEVICE
摘要 An internal voltage generator of a semiconductor memory device is provided to reduce power consumption by enabling a pumping controller and a reference voltage generator. A referent voltage generating part(210) produces a reference voltage, and a pumping controller(220) is enable at an active operation. The pumping controller compares the feedback voltage with the reference voltage and outputs a pumping enable signal based on the result. A storage stores/outputs the pumping enable signal outputted from the pumping controller. The charge pumping part(240) performs charge pumping in response to the pumping enable signal outputted from the storage and drive pumping voltage.
申请公布号 KR100894490(B1) 申请公布日期 2009.04.22
申请号 KR20080019682 申请日期 2008.03.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, JAE KWAN;KIM, JEE YUL
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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