METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE

摘要

A method of manufacturing a liquid crystal display device is provided to remove the peeling phenomenon caused by the stress difference between a gate insulating layer and an interlayer insulating film without deteriorating the characteristic of a TFT. The hydrogen plasma process is performed on a substrate including a semiconductor pattern(151). A silicon oxide film(161) is formed on the substrate. A silicon nitride film(163) is formed on the silicon oxide film. A gate electrode(153) branched from a gate line is formed on the silicon nitride film. An interlayer insulating film(154) is formed on the silicon nitride film including the gate electrode at the same temperature as the silicon nitride film. As the interlayer insulating film is patterned, the source/drain regions of the semiconductor pattern are exposed. Source/drain electrodes(155a,155b) are formed on the interlayer insulating film including the source/drain regions.