发明名称 Variable layout structure for producing CMOS circuit
摘要 A layout structure for a CMOS circuit comprises a transistor layer forming P-type transistors 11 and 21 and N-type transistors 12 and 22, and a resistor layer which includes a resistor 13 formed to have a predetermined length and to make plural appropriate portions or the entire of the resistor along a direction of the length satisfy a mask rule necessary for providing VIAs, the resistor being connected to appropriate connecting portions of the P-type transistors and the N-type transistors through the VIAs by metal wires 31 formed of a metal layer, and the resistor having a predetermined circuit resistance which can be set based on the positions of the appropriate connecting portions.
申请公布号 US7521761(B2) 申请公布日期 2009.04.21
申请号 US20040912293 申请日期 2004.08.06
申请人 FUJITSU LIMITED 发明人 SATSUKAWA YOSHIHIKO
分类号 H01L21/822;H01L23/62;H01L21/82;H01L21/8234;H01L27/02;H01L27/04;H01L27/06;H01L27/092;H01L31/062 主分类号 H01L21/822
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