| 摘要 |
A method for increasing a charge quantity of a nuclear-cell and a high efficiency beta-cell using the same are provided to increase amount of a current by sending an electron-hole pair generated in a depletion layer to P type and N type without a moving energy loss. A PN junction including a P type dopant(1) and an N type dopant(2) is horizontally formed from a surface of one side of a silicone substrate(3) to an inner side. An insulation layer(5) is grown in a total dimension of a surface of the PN junction. An isotope layer(4) generating a radiation is formed on a top of the insulation layer, and has a dimension corresponding to the PN junction region. Depth of the PN junction and thickness of the insulation layer correspond to a validation distance(6) of an isotope emitted radiation. An insulation film thicker than a validation distance of radiation generated in 63Ni is formed on a top of the isotope layer. The insulation film is formed in order to prevent a leakage of the radiation. |
