发明名称 |
Power device with improved edge termination |
摘要 |
A field effect transistor includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region.
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申请公布号 |
US7521773(B2) |
申请公布日期 |
2009.04.21 |
申请号 |
US20060396362 |
申请日期 |
2006.03.31 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YILMAZ HAMZA;CALAFUT DANIEL |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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