发明名称 Methods for forming capacitor structures
摘要 A method for forming a capacitor includes forming a dielectric layer over a substrate. A conductive layer is formed over the dielectric layer. Dopants are implanted through at least one of the dielectric layer and the conductive layer after forming the dielectric layer so as to form a conductive region under the dielectric layer, wherein the conductive layer is a top electrode of the capacitor and the conductive region is a bottom electrode of the capacitor.
申请公布号 US7521330(B2) 申请公布日期 2009.04.21
申请号 US20070757763 申请日期 2007.06.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WU CHUN CHIEH;HUANG CHI-FENG;CHEN CHUN-HUNG;CHAO CHIH-PING;CHERN JOHN
分类号 H01L21/20 主分类号 H01L21/20
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