| 摘要 |
A method of forming a high dielectric film for a semiconductor device comprises supplying a first source gas to a reaction chamber during a first time interval, supplying a first reactant gas to the reaction chamber during a second time interval after the first time interval, supplying a second source gas to the reaction chamber for a third time interval after the second time interval, supplying a second reactant gas to the reaction chamber for a fourth time interval after the third time interval, and supplying an additive gas including nitrogen to the reaction chamber during a fifth time interval.
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