| 发明名称 |
Vertical thyristor in complementary SiGe bipolar process |
| 摘要 |
In a complementary SiGe bipolar process, a pnpn thyristor structure is formed from some of the layers of a pnp transistor and an npn transistor formed on top of each other and making use of the SiGe gates to define the blocking junction.
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| 申请公布号 |
US7521310(B1) |
申请公布日期 |
2009.04.21 |
| 申请号 |
US20050261235 |
申请日期 |
2005.10.29 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;SADOVNIKOV ALEXEL;HOPPER PETER J. |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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