Semiconductor device, method for manufacturing the same, and gate electrode structure

摘要

A semiconductor structure includes (a) a semiconductor substrate having a channel region and a first integrated impurity diffusion region including a first electric field reduction region that is formed adjacent to the channel region and which includes a plurality of specific regions separated from each other, (b) a first insulating film formed on the semiconductor substrate, and (c) a first electrode structure having a first region formed above the channel region and a second region that is formed adjacent to the first region and above the first electric field reduction region to be self-aligned with the first electric field reduction region, the semiconductor structure including one or more openings formed above the plurality of specific regions and a first opening surrounding portion surrounding the one or more openings.