发明名称 |
Method for forming integrated circuit |
摘要 |
A method of forming an integrated circuit includes providing a buffer layer comprising a dielectric material above a layer of conductive material and providing a layer of mask material above the buffer layer. The mask material comprises amorphous carbon. The method also includes removing a portion of the buffer layer and the layer of mask material to form a mask. A feature is formed in the layer of conductive material according to the mask.
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申请公布号 |
US7521304(B1) |
申请公布日期 |
2009.04.21 |
申请号 |
US20020230775 |
申请日期 |
2002.08.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUANG RICHARD J.;BELL SCOTT A.;DAKSHINA-MURTHY SRIKANTESWARA;FISHER PHILIP A.;NGUYEN RICHARD C.;TABERY CYRUS E.;YOU LU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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