发明名称 Semiconductor device reducing leakage across a ferroelectric layer
摘要 A bottom electrode (52) made of Ir, an initial layer (53), a core layer (54) and a termination layer (55) of a PZT film, and a top electrode (56) made of IrO2, are formed on an underlining film (51). The initial layer (53) is formed in a low oxygen partial pressure with a thickness of 5 nm. The thickness of the core layer (54) is set to 120 nm. The termination layer (55) is set to be an excess Zr layer. In other words, as for the composition of the termination layer (55), "Zr/(Zr+Ti)" is set to be larger than 0.5, and in the termination layer (55) Zr is contained more excessively than the morphotropic phase boundary composition.
申请公布号 US7521745(B2) 申请公布日期 2009.04.21
申请号 US20060580198 申请日期 2006.10.13
申请人 FUJITSU LIMITED 发明人 UMEMIYA SHIGEYOSHI;MATSUURA OSAMU
分类号 H01L29/92;H01B3/12;H01L21/02;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;H01L27/115 主分类号 H01L29/92
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