| 摘要 |
<p>A method for fabricating a phase shift mask in a semiconductor device is provided to prevent the damage of a mask pattern surface by removing a carbon film through a dry etching with an oxygen plasma. A mask film and a resist film are formed on a transparent substrate(100). A resist film pattern and a mask film pattern(111) are formed by performing a photolithographic process and an etching process. The resist film pattern is removed, and a spacer film is formed on the front of the transparent including a mask film pattern for controlling the width of the trench. A spacer layer is made of a carbon, and the transparent substrate between the mask film patterns is exposed by performing an anisotropic etching process of a spacer layer. The side wall spacer(131) is formed on the side wall of the mask film pattern and is removed through a drying etching process with an oxygen plasma.</p> |
