发明名称 FOCUS RING FOR SEMICONDUCTOR TREATMENT AND PLASMA TREATMENT DEVICE
摘要 A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.
申请公布号 KR100893956(B1) 申请公布日期 2009.04.20
申请号 KR20037010739 申请日期 2003.08.14
申请人 发明人
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
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